View TGA4508_593063.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Advance Product Information
July 19, 2005
Ka Band Low Noise Amplifier
Key Features
* * * * * * *
TGA4508
Typical Frequency Range: 30 - 42 GHz 21 dB Nominal Gain 2.8 dB Nominal Noise Figure 14 dBm Nominal P1dB @ 38 GHz Bias 3 V, 40mA 0.15 um 3MI pHEMT Technology Chip Dimensions 1.7 x 0.8 x 0.1 mm (0.067 x 0.031 x 0.004) in
Preliminary Measured Data
Bias Conditions: Vd = 3 V, Id = 40 mA
Primary Applications
* Point-to-Point Radio Point-to-MultiPoint Radio Ka Band VSAT *
40 Ga in & R etu rn L o ss (d B ) 30 20 10 0 -10 -20 -30 -40 25 27 29 31 33 35 37 39 41 43 45 Frequency (GHz)
5.0 4.5 N o is e F ig u r e (d B ) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 30 31 32 33 34 35 36 37 38 39 40
Gain
*
IRL ORL
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 1
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 19, 2005
TGA4508
TABLE I MAXIMUM RATINGS 1/ SYMBOL V
+
PARAMETER Positive Supply Voltage Gate 1 Supply Voltage Range Positive Supply Current Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature
VALUE 5V -1 V TO 0 V 190 mA 6 mA 12 dBm 0.37 W 117 C 320 C -65 to 117 C
NOTES 2/
Vg1 I+ | IG | PIN PD TCH TM TSTG 1/ 2/ 3/ 4/
2/ 2/ 2/, 3/ 4/, 5/
These ratings represent the maximum operable values for this device. Current is defined under no RF drive conditions. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. When operated at this power dissipation with a base plate temperature of 70 C, the median life is 1 E+6 hours. Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. These ratings apply to each individual FET.
5/
TABLE II DC PROBE TESTS (Ta = 25 0C, Nominal) SYMBOL VBVGS3 PARAMETER Breakdown Voltage gatesource Breakdown Voltage gatedrain Pinch-off Voltage MINIMUM -30 MAXIMUM -5 UNITS V
VBVGD3 VP1,2,3
-30 -1.0
-5 -0.1
V V
Q1 is 100 um FET, Q2 is 200 um FET, Q3 is 300 um FET
2
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 19, 2005
TGA4508
TABLE III ELECTRICAL CHARACTERISTICS
(Ta = 25 0C, Nominal)
PARAMETER
Drain Voltage, Vd Drain Current, Id Gate Voltage, Vg Small Signal Gain, S21 Input Return Loss, S11 Output Return Loss, S22 Noise Figure, NF Output Power @ 1 dB Compression Gain @ 38 GHz, P1dB
TYPICAL
3 40 -0.5 to 0 21 8 15 2.8 14
UNITS
V mA V dB dB dB dB dBm
TABLE IV THERMAL INFORMATION* TEST CONDITIONS Vd = 3 V ID = 40 mA Pdiss = 0.12 W TCH (oC) 85 RTJC (qC/W) 125 TM (HRS) 2.2 E+13
PARAMETER RJC Thermal Resistance (channel to backside of carrier)
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated.
3
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 19, 2005
TGA4508
Measured Data
Bias Conditions: Vd = 3 V, Id = 40mA/60mA
30 25 20 15 10 Gain (dB) 5 0 -5 -10 -15 -20 -25 -30 -35 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 Fre que ncy (GHz)
Ids=60mA
Ids=40mA
5.0 4.5 4.0 Noise Figure (dB) 3.5 3.0 2.5 2.0 1.5 1.0 30 31 32 33 34 35 36 37 38 39 40 Fre que ncy (GHz)
Ids=60mA Ids=40mA
4
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 19, 2005
TGA4508
Measured Data
Bias Conditions: Vd = 3 V, Id = 40mA/60mA
0
Ids=40mA
-5 Input Return Loss (dB) -10 -15 -20 -25 -30 -35 -40 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 Fre que ncy (GHz)
Ids=60mA
0 -5 Output Return Loss (dB) -10 -15 -20 -25 -30 -35 -40 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 Fre que ncy (GHz)
Ids=40mA
Ids=60mA
5
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 19, 2005
TGA4508
Measured Data
23 21 19 Pout (dBm), Gain (dB) 17 15 13
Bias Conditions: Vd = 3 V, Id = 40mA
130 120
Gain
110 100 90 80 Ids (mA)
Ids (mA)
6
Pout
11 9 7 70 60
40GHz
IDS
50 40
38GHz
-8 -6 -4 Pin (dBm) -2 0 2
5 -16 -14 -12 -10
23 21 19 Pout (dBm), Gain (dB) 17 15 13 11 9 7 5 -16 -14 -12
Bias Conditions: Vd = 3 V, Id = 60 mA
140 130
Gain
120 110
Pout
100 90 80 70
IDS
40GHz 38GHz
60 50 2
-10
-8
-6 -4 Pin (dBm)
-2
0
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 19, 2005
TGA4508
Measured Data
Bias Conditions: Vd = 3 V, Id = 40mA/60mA
18 17 16 15 P1dB (dBm) 14 13 12 11 10 9 8 34 35 36 37 38 39 40 41 42 43 Fre que ncy (GHz)
Ids=60mA Ids=40mA
7
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 19, 2005
TGA4508
Mechanical Drawing
$ $ & A ! ! '#A"" & (A!' ! " # ! ( A # ! $ ( A $
$"!A! $
$"!A!
A A ! A $ $ ' ' A % " & ' A % &
Vv)AAHvyyvrrADpur Uuvpxr)AA A# 8uvArqtrAAiqAhqAqvrvAhrAuAAprrAsAiqAhq 8uvAvrAyrhpr)AAA$ A! BI9ADTA768FTD9@APAAHHD8 7qAhqAAE AAAAASAADAAAAAA AA!A#AA' !AAAAA AA A#AA# AA!A#AA'
7qAhqAAE!AAAAAWtAAAAAAAAAA AA A#AA# 7qAhqAAE"AAAAAWq 7qAhqAAE#AAAAAWq"AAAAAAAA AA A#AA# 7qAhqAAE$AAAAASAAPAAA
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
8
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 19, 2005
TGA4508
Chip Assembly Diagram
9J
9G
X)
X)
5) ,Q
S)
S)
5) 2XW
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
9
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 19, 2005
TGA4508 Assembly Process Notes
Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C for 30 sec An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200 C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
10
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com

▲Up To Search▲

Price & Availability of TGA4508

	To Download TGA4508 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .